View HFW10N60_4867834.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HFW10N60
Sep 2009
BVDSS = 600 V
HFW10N60
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 44 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.64 (Typ.) @VGS=10V 100% Avalanche Tested
RDS(on) typ = 0.64 ID = 9.5 A
D2-PAK
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25) *
TC=25 unless otherwise specified
Parameter
Value 600
Units V A A A V mJ A mJ V/ns W W W/
- Continuous (TC = 25) - Continuous (TC = 100) - Pulsed
(Note 1)
9.5 6.03 38 30
(Note 2) (Note 1) (Note 1) (Note 3)
520 9.5 15.6 5.5 3.13 156 1.25 -55 to +150 300
Power Dissipation (TC = 25) - Derate above 25 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Resistance Characteristics
Symbol RJC RJA RJA Junction-to-Case Junction-to-Ambient* Junction-to-Ambient Parameter Typ. ---Max. 0.8 40 62.5 /W Units
* When mounted on the minimum pad size recommended (PCB Mount)
SEMIHOW REV.A0,Aug 2009
HFW10N60
Electrical Characteristics TC=25 C
Symbol Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 VGS = 10 V, ID = 4.75 A 2.5 --0.64 4.5 0.8 V
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ID = 250 , Referenced to25 VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125 VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.65 ------1 10 100 -100 V V/ BVDSS Breakdown Voltage Temperature Coefficient /TJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1750 165 26 2270 215 34
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note 4,5)
VDS = 300 V, ID = 9.5 A, RG = 25
--------
27 75 120 80 44 9.7 20
55 150 240 160 57 ---
nC nC nC
VDS = 480V, ID = 9.5 A, VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 9.5 A, VGS = 0 V IS = 9.5 A, VGS = 0 V diF/dt = 100 A/s (Note 4) --------430 5.8 9.5 38 1.4 --A V C
Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=10.56mH, IAS=9.5A, VDD=50V, RG=25, Starting TJ =25C 3. ISD9.5A, di/dt300A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature
SEMIHOW REV.A0,Aug 2009
HFW10N60
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
1800
VGS, Gate-Source Voltage [V]
Ciss
1500
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
10
VDS = 120V VDS = 300V VDS = 480V
Capacitances [pF]
8
1200
Coss
900 600 300 0 -1 10
Note ; 1. VGS = 0 V 2. f = 1 MHz
6
4
Crss
2
Note : ID = 9.5A
0
10
0
10
1
0
5
10
15
20
25
30
35
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
SEMIHOW REV.A0,Aug 2009
HFW10N60
Typical Characteristics
(continued)
Figure 7. Breakdown Voltage Variation vs Temperature
Figure 8. On-Resistance Variation vs Temperature
10
8
ID, Drain Current [A]
6
4
2
0 25
50
75
100
125
150
TC, Case Temperature [ ]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
10
0
D=0.5
Z JC Thermal Response (t),
0.2
10
-1
0.1 0.05 0.02 0.01 single pulse
Notes : (t) W 1. Z JC = 0.8 / Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z JC (t)
PDM t1
-3
10
-2
t2
10
0
10
-5
10
-4
10
10
-2
10
-1
10
1
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
SEMIHOW REV.A0,Aug 2009
HFW10N60
Fig 12. Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg
10V
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS RG
RL VDD
( 0.5 rated VDS )
VDS
90%
10V
DUT
Vin
10%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L VDS VDD ID RG DUT VDD BVDSS IAS
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD
ID (t) VDS (t)
tp
10V
Time
SEMIHOW REV.A0,Aug 2009
HFW10N60
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT + VDS _ IS L Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * IS controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
SEMIHOW REV.A0,Aug 2009
HFW10N60
Package Dimension
SEMIHOW REV.A0,Aug 2009

▲Up To Search▲

Price & Availability of HFW10N60

	To Download HFW10N60 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .